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TIC106 SERIES SILICON CONTROLLED RECTIFIERS
Copyright (c) 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1997
q q q q q
5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 200 A
K A G
1 2 3 TO-220 PACKAGE (TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING TIC106D Repetitive peak off-state voltage (see Note 1) TIC106M TIC106S TIC106N TIC106D Repetitive peak reverse voltage TIC106M TIC106S TIC106N Continuous on-state current at (or below) 80C case temperature (see Note 2) Average on-state current (180 conduction angle) at (or below) 80C case temperature (see Note 3) Surge on-state current (see Note 4) Peak positive gate current (pulse width 300 s) Peak gate power dissipation (pulse width 300 s) Average gate power dissipation (see Note 5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL VRRM VDRM SYMBOL VALUE 400 600 700 800 400 600 700 800 5 3.2 30 0.2 1.3 0.3 -40 to +110 -40 to +125 230 A A A A W W C C C V V UNIT
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 k. 2. These values apply for continuous dc operation with resistive load. Above 80C derate linearly to zero at 110C. 3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80C derate linearly to zero at 110C. 4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 5. This value applies for a maximum averaging time of 20 ms.
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INFORMATION
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
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TIC106 SERIES SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER IDRM IRRM IGT Repetitive peak off-state current Repetitive peak reverse current Gate trigger current VD = rated VDRM VR = rated VRRM VAA = 6 V VAA = 6 V tp(g) 20 s VGT Gate trigger voltage VAA = 6 V tp(g) 20 s VAA = 6 V tp(g) 20 s VAA = 6 V IH Holding current Initiating IT = 10 mA VAA = 6 V Initiating IT = 10 mA V TM dv/dt NOTE Peak on-state voltage Critical rate of rise of off-state voltage ITM = 5 A VD = rated VD (See Note 6) RGK = 1 k TC = 110C 10 RGK = 1 k TEST CONDITIONS RGK = 1 k IG = 0 RL = 100 RL = 100 RGK = 1 k RL = 100 RGK = 1 k RL = 100 RGK = 1 k RGK = 1 k TC = - 40C TC = 110C 0.4 0.2 8 mA 5 1.7 V V/s 0.6 TC = 110C TC = 110C tp(g) 20 s TC = - 40C 60 MIN TYP MAX 400 1 200 1.2 1 V UNIT A mA A
6: This parameter must be measured using pulse techniques, tp = 300 s, duty cycle 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 3.5 62.5 UNIT C/W C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER tgt tq Gate-controlled turn-on time Circuit-commutated turn-off time IT = 5 A IT = 5 A IRM = 8 A TEST CONDITIONS IG = 10 mA IG = 10 mA See Figure 1 See Figure 2 MIN TYP 1.75 7.7 MAX UNIT s s
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TIC106 SERIES SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
30 V 6 IT VG VA RG G VG IG VA 90% PMC1AA DUT 10% t gt
Figure 1. Gate-controlled turn-on time
30 V 6 0.1 F to 0.5 F R2
IA VA DUT RG G1 V G1 IG 0.1 VK (IRM Monitor)
R1
TH1 RG IG V G2
NOTES: A. Resistor R1 is adjusted for the specified value of I RM . B. Resistor R2 value is 30/IH , where I H is the holding current value of thyristor TH1. C. Thyristor TH1 is the same device type as the DUT. D. Pulse Generators, G1 and G2, are synchronised to produce an on-state anode current waveform with the following characteristics: tP = 50 s to 300 s G2 duty cycle = 1% E. Pulse Generators, G1 and G2, have output pulse amplitude, V G , of 20 V and duration of 10 s to 20 s.
G2 t P Synchronisation
V G1 V G2 IT IA tP 0 IRM VA
VT 0
tq
PMC1AB
Figure 2. Circuit-commutated turn-off time
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TIC106 SERIES SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
AVERAGE ANODE ON-STATE CURRENT DERATING CURVE
IT(AV) - Maximum Average Anode Forward Current - A 6 Continuous DC 5
TI20AA
MAX CONTINUOUS ANODE POWER DISSIPATED vs CONTINUOUS ON-STATE CURRENT
PA - Max Continuous Anode Power Dissipated - W 100 TJ = 110C
TI20AB
4 = 180 3
10
2 0 1 180 Conduction Angle 0 30 40 50 60 70 80 90 100 110
1 1 10 IT - Continuous On-State Current - A 100 TC - Case Temperature - C
Figure 3.
Figure 4.
SURGE ON-STATE CURRENT vs CYCLES OF CURRENT DURATION
100 TC 80 C ITM - Peak Half-Sine-Wave Current - A No Prior Device Conduction Gate Control Guaranteed
TI20AC
TRANSIENT THERMAL RESISTANCE vs CYCLES OF CURRENT DURATION
10 RJC(t) - Transient Thermal Resistance - C/W
TI20AD
10
1
1 1 10 Consecutive 50 Hz Half-Sine-Wave Cycles 100
0*1 1 10 Consecutive 50 Hz Half-Sine-Wave Cycles 100
Figure 5.
Figure 6.
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TIC106 SERIES SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT vs CASE TEMPERATURE
VAA = 6 V IGT - Gate Trigger Current - A tp(g) 20 s VGT - Gate Trigger Voltage - V RL = 100 0*8
TC20AA
GATE TRIGGER VOLTAGE vs CASE TEMPERATURE
1 VAA = 6 V RL = 100 RGK = 1 k tp(g) 20 s 0*6
TC20AB
100
0*4
0*2
10 -50
-25
0
25
50
75
100
125
0 -50
-25
0
25
50
75
100
125
TC - Case Temperature - C
TC - Case Temperature - C
Figure 7.
Figure 8.
GATE FORWARD VOLTAGE vs GATE FORWARD CURRENT
10 IA = 0 TC = 25 C tp = 300 s Duty Cycle 2 %
TC20AC
HOLDING CURRENT vs CASE TEMPERATURE
10 VAA = 6 V RGK = 1 k IH - Holding Current - mA Initiating IT = 10 mA
TC20AD
VGF - Gate Forward Voltage - V
1
0*1 0*1
1
10
100
1000
1 -50
-25
0
25
50
75
100
125
IGF - Gate Forward Current - mA
TC - Case Temperature - C
Figure 9.
Figure 10.
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TIC106 SERIES SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
PEAK ON-STATE VOLTAGE vs PEAK ON-STATE CURRENT
2.5
TC20AE
GATE-CONTROLLED TURN-ON TIME vs GATE CURRENT
10.0 VAA = 30 V tgt - Gate-Controlled Turn-On Time - s RL = 6 8.0 TC = 25 C See Test Circuit and Waveforms 6.0
TC20AF
VTM - Peak On-State Voltage - V
2.0
TC = 25 C tp = 300 s Duty Cycle 2 %
1.5
1.0
4.0
0.5
2.0
0.0 0*1
1
10
0.0 0*1
1 IG - Gate Current - mA
10
ITM - Peak On-State Current - A
Figure 11.
Figure 12.
CIRCUIT-COMMUTATED TURN-OFF TIME vs CASE TEMPERATURE
16 t q - Circuit-Commutated Turn-Off Time - s 14 12 10 8 6 4 2 0 20 VAA = 30 V RL = 6 IRM 8 A See Test Circuit and Waveforms
TC20AG
40
60
80
100
120
TC - Case Temperature - C
Figure 13.
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INFORMATION
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TIC106 SERIES SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
MECHANICAL DATA TO-220 3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20
o
3,96 3,71
10,4 10,0
2,95 2,54 6,6 6,0 15,90 14,55
1,32 1,23
see Note B
see Note C
6,1 3,5
0,97 0,61 1 2 3
1,70 1,07
14,1 12,7
2,74 2,34 5,28 4,88 2,90 2,40
0,64 0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE
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TIC106 SERIES SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright (c) 1997, Power Innovations Limited
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